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| SI3440DV New Product Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.375 @ VGS = 10 V 0.400 @ VGS = 6.0 V ID (A) 1.5 1.4 D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested APPLICATIONS D Primary Side Switch for Low Power DC/DC Converters (1, 2, 5, 6) D TSOP-6 Top View 1 3 mm 6 5 (3) G 2 3 4 (4) S N-Channel MOSFET 2.85 mm Ordering Information: SI3440DV-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 secs 150 "20 1.5 1.1 6 4 0.8 1.7 2.0 1.0 Steady State Unit V 1.2 0.8 A mJ 1.0 1.14 0.59 A W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72380 S-32412--Rev. B, 24-Nov-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W C/W 1 SI3440DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 150 V, VGS = 0 V VDS = 150 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 1.5 A VGS = 6.0 V, ID = 1.4 A VDS = 15 V, ID = 1.5 A IS = 1.7 A, VGS = 0 V 4 0.310 0.330 4.1 0.8 1.2 0.375 0.400 2 4 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 75 V, RL = 75 W ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 4 VDS = 75 V, VGS = 10 V, ID = 1.5 A 5.4 1.1 1.9 9 8 10 20 15 40 15 15 15 30 25 60 ns ns W 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 4.0 3.5 3.0 I D - Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 4V 3V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 I D - Drain Current (A) VGS = 10 thru 5 V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Transfer Characteristics TC = 125_C 25_C -55_C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Gate-to-Source Voltage (V) Document Number: 72380 S-32412--Rev. B, 24-Nov-03 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 SI3440DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 r DS(on) - On-Resistance ( W ) 320 Vishay Siliconix Capacitance C - Capacitance (pF) 0.4 VGS = 6.0 V 0.3 VGS = 10 V 240 Ciss 160 0.2 0.1 80 Crss Coss 0.0 0 1 2 ID - Drain Current (A) 3 4 0 0 10 20 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 1.5 A 8 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.5 A 2.0 6 r DS(on) - On-Resistance (W) (Normalized) 1.5 4 2 1.0 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 1.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 ID = 1.5 A 0.6 I S - Source Current (A) TJ = 150_C 0.4 TJ = 25_C 1 0.0 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72380 S-32412--Rev. B, 24-Nov-03 www.vishay.com 3 SI3440DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 30 25 ID = 250 mA 20 Power (W) 0.0 Single Pulse Power 0.4 V GS(th) Variance (V) 15 10 -0.4 -0.8 5 0 0.01 -1.2 -50 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 rDS(on) Limited 10 I D - Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 0.1 TA = 25_C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72380 S-32412--Rev. B, 24-Nov-03 SI3440DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72380 S-32412--Rev. B, 24-Nov-03 www.vishay.com 5 |
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